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Parameters:

  • Model:FZT649TA
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:FZT649
  • Package:SOT-223

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
35V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
25V
集电极连续输出电流IC
Collector Current(IC)
3A
截止频率fT
Transtion Frequency(fT)
150MHz
直流电流增益hFE
DC Current Gain(hFE)
100~300
管压降VCE(sat)
Collector-Emitter Saturation Voltage
600mV/0.6V
耗散功率Pc
Power Dissipation
2W
Description & ApplicationsNPN Low Saturation Transistor high current gain
描述与应用NPN低饱和晶体管 高电流增益

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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FZT649TA
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