集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 180V |
集电极连续输出电流IC
Collector Current(IC) | 500mA/0.5A |
截止频率fT
Transtion Frequency(fT) | 70MHz |
直流电流增益hFE
DC Current Gain(hFE) | 500 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 250mV/0.25V |
耗散功率Pc
Power Dissipation | 2W |
| Description & Applications | SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR Gain of 500 at IC=100mA Very low saturation voltage Darlington replacement Battery powered circuits |
| 描述与应用 | SOT223 NPN硅平面中功率高增益晶体管 当IC=100MA时增益为500 非常低的饱和电压 达林顿更换 电池供电电路 |