集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -80V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −60V |
集电极连续输出电流IC
Collector Current(IC) | -3A |
截止频率fT
Transtion Frequency(fT) | 140MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −600mV/-0.6V |
耗散功率Pc
PoWer Dissipation | 2W |
| Description & Applications | PNP SILICON PLANAR HIGH PERFORMANCE TRANSISTOR Features • Low Saturation Voltage • Complementary Type FZT651 |
| 描述与应用 | PNP硅平面高性能晶体管 特点 •低饱和电压 •互补型FZT651 |