集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | 200V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | 100V |
集电极连续输出电流IC
Collector Current(IC) | 6A |
截止频率fT
Transtion Frequency(fT) | 130MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | 375mV/0.375V |
耗散功率Pc
Power Dissipation | 3W |
| Description & Applications | SOT223 NPN SILICON PLANAR HIGH CURRENT(HIGH PERFORMANCE) TRANSISTORS Extremely low equivalent on-resistance; RCE(sat) =44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages Excellent hFE characteristics specified up to 10 Amps |
| 描述与应用 | SOT223 NPN硅平面高电流（高性能）晶体管 极低的等效导通电阻;在5A时RCE（饱和）=44mΩ 6安培连续电流，高达20安培的峰值电流 极低的饱和电压 优秀HFE 高达10安培的特性 |