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Parameters:

  • Model:HAT1069C-EL-E
  • Manufacturer:HUABAN
  • Date Code:04+NOPB 05+NOPB
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:VY
  • Package:SOT-363/SC70-6/CMFPAK - 6)

最大源漏极电压Vds
Drain-Source Voltage
-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage
8V
最大漏极电流Id
Drain Current
-4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.038Ω @-1.5A,-4.5V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-0.3--1.2V
耗散功率Pd
Power Dissipation
900mW/0.9W
Description & ApplicationsFeatures • Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive • High density mounting
描述与应用•低导通电阻 RDS(ON) =38MΩ典型值(VGS=-4.5 V) •高速开关 •能够为1.8V栅极驱动 •高密度安装

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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HAT1069C-EL-E
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