Please log in first
Home
Cart0

×

Parameters:

  • Model:IRFR210BTF
  • Manufacturer:HUABAN
  • Date Code:05+NOPB
  • Standard Package:2000
  • Min Order:10
  • Mark/silk print/code/type:IRFR210B
  • Package:TO-252/D-PAK

最大源漏极电压Vds Drain-Source Voltage200V
最大栅源极电压Vgs(±) Gate-Source Voltage
最大漏极电流Id Drain Current2.7A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance1.5Ω/Ohm @1350mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage2.0-4.0V
耗散功率Pd Power Dissipation2.5W
Description & Applications200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability
描述与应用200V N沟道MOSFET 概述 这些N沟道增强型功率场效应晶体管都采用飞兆半导体专有的,平面的,DMOS技术。 这种先进的技术,特别是针对已尽量减少对通态电阻,提供出色的开关性能,并承受高能量脉冲在雪崩和减刑模式。 这些器件非常适用于高效率开关DC/ DC转换器,开关电源,DC-AC转换器,不间断电源和电机控制。•2.7A,200V,RDS上) =1.5Ω@ VGS= 10 V •低栅极电荷(典型7.2nC) •低Crss(典型6.8 pF) •快速开关 •100%雪崩测试 •改进的dv / dt能力

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
IRFR210BTF
*Title:
Message:
*Code: