| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 33A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.031Ω/Ohm @18A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 5.7W |
| Description & Applications | HEXFET® Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated |
| 描述与应用 | HEXFET®功率MOSFET 描述 第五代HEXFETs国际整流器采用先进的加工技术，以实现极低的导通电阻每硅片面积。这样做的好处， 结合快速开关速度和坚固耐用的设备的设计，HEXFET功率MOSFET是众所周知的，为设计师提供了一个非常有效的 和可靠的装置，用于在各种各样的应用中。 D-PAK是专为表面安装使用气相，红外或波峰焊技术。直引线型（IRFU系列）是通孔安装的应用程序。有可能在典型的表面贴装应用的功耗水平，直至到1.5瓦。 表面贴装 先进的工艺技术 超低导通电阻 动态dv/ dt额定值 快速切换 |