最大源漏极电压Vds
Drain-Source Voltage | -30V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -10V |
最大漏极电流Id
Drain Current | -200mA/-0.2A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 54Ω@ VGS = -1.5V, ID = -1mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.4~-1.4V |
耗散功率Pd
Power Dissipation | 800mW/0.8W |
| Description & Applications | General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 1.5V drive. • Composite type with 2 MOSFETs contained in a single package |
| 描述与应用 | 通用开关设备应用 特点 •低导通电阻。 •超高速开关。 •1.5V驱动。 •一个单一的包装中包含的2MOSFET的复合型 |