集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | |
集电极连续输出电流IC
Collector Current(IC) | |
截止频率fT
Transtion Frequency(fT) | |
直流电流增益hFE
DC Current Gain(hFE) | |
管压降VCE（sat）
Collector-Emitter Saturation Voltage | |
耗散功率Pc
Power Dissipation | |
| Description & Applications | • The RF Line NPN Silicon High-Frequency Transistors • High Gain-Bandwidth Product:fT = 8.0 GHz (Typ) @50 mA • Low Noise Figure NF = 2.0 dB (Typ) @ f = 500 MHz (MMBR571 LT1 , T3) NF(matched) = 1.6 dB (TYP) @ f = 1.0 GHz (MRF5711LT1, MRF571) • High Gain GNF = 17 dB (Typ) @ 30 mW500 MHz (MMBR571 LT1, T3) • High Power Gain GPe (matched)= 13.5 dB Typ) (MRF5711 LT1) •State Of–the–ART Technology Fine Line Geometry Ion–implanted Arsenic Emitters Gold Top Metallization and Wires Silicon Nitride Passivation • Available in tape and reel packaging options: T1 suffix= 3,000 units per reel T3 suffix= 10,000 units per reel |
| 描述与应用 | •RF线NPN硅高频晶体管 •高增益带宽产品：FT =8.0千兆赫（典型值）@ 50毫安 •低噪声图 NF= 2.0分贝（典型值）@ F =500 MHz的（MMBR571 LT1，T3） NF（匹配）= 1.6分贝（TYP）@ F =1.0千兆赫（MRF5711LT1 MRF571） •高增益 GNF= 17分贝（典型值）@30 MW500兆赫（MMBR571 LT1，T3） •高功率增益 GPE（匹配）=13.5 dB典型值）（MRF5711 LT1） •国家最先进的技术 精细线几何 离子注入砷发射 黄金顶部金属化和电线 氮化硅钝化 •可在磁带和卷轴包装选择： T1后缀=3000单位每卷 T3后缀=10,000单位每卷 |