| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 7.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.05Ω/Ohm 6A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 3W |
| Description & Applications | N-Channel Enhancement Mode Field Effect Transistor General Description Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package |
| 描述与应用 | N沟道增强型场效应晶体管 概述 电源SOT N沟道增强模式电源领域 场效应晶体管都采用飞兆半导体 专有的，高密度，DMOS技术。这很 高密度的过程特别是针对减少 通态电阻和提供优越的开关 性能。这些器件特别适用于低 直流电动机的控制和DC / DC电压应用，如 转换快速开关，低线的功率损耗， 以及抗瞬变是必要的。 高密度电池设计极低的RDS（ON） 一种广泛使用的高功率和电流处理能力 表面贴装封装 |