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Parameters:

  • Model:NTF2955T1G
  • Manufacturer:HUABAN
  • Date Code:1833+ROHS 05+
  • Standard Package:1000
  • Min Order:10
  • Mark/silk print/code/type:2955
  • Package:SOT-223

最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
20V
最大漏极电流Id
Drain Current
-2.6A
源漏极导通电阻Rds
Drain-Source On-State
Resistance
0.145Ω @-750mA,-10V
开启电压Vgs(th)
Gate-Source Threshold Voltage
-2.0--4.0V
耗散功率Pd
Power Dissipation
2.8W
Description & ApplicationsFeatures • TMOS7 Design for low RDS(on) • Withstands High Energy in Avalanche and Commutation Modes
描述与应用•TMOS7设计低RDS(on) •可承受高能量雪崩和减刑模式

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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NTF2955T1G
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