最大源漏极电压Vds
Drain-Source Voltage | -8V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | -8V |
最大漏极电流Id
Drain Current | -5.2A/-0.2A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 62mΩ@ VGS = -1.8V, ID = -2.0A |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.45V |
耗散功率Pd
Power Dissipation | 1.3W |
| Description & Applications | Power MOSFET P-Channel Chip FET Features • Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Miniature ChipFET Surface Mount Package Applications • Power Management in Portable and Battery–Powered Products; i.e.,Cellular and Cordless Telephones and PCMCIA Cards |
| 描述与应用 | 功率MOSFET的P-通道芯片FET 特点 •低的RDS（on） •更高的效率延长电池寿命 •逻辑电平栅极驱动器 •微型ChipFET表面贴装封装 应用 •电源管理在便携式和电池供电的产品，也就是说，蜂窝电话和无绳电话和PCMCIA卡 |