集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -40V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC
Collector Current(IC) | -1A |
截止频率fT
Transtion Frequency(fT) | 150MHz |
直流电流增益hFE
DC Current Gain(hFE) | 300~800 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc
PoWer Dissipation | 300mW/0.3W |
| Description & Applications | General description PNP low VCE(sat )Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package. Features Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Applications General-purpose switching and muting LCD backlighting Supply line switching circuits Battery-driven equipment (mobile phones, video cameras and handheld devices) |
| 描述与应用 | 一般说明 PNP低VCE（饱和）突破性小信号（BISS）晶体管，采用SOT23（TO-236AB）小型表面贴装器件（SMD）塑料包装。 特点 低集电极 - 发射极饱和电压VCE监测 高集电极电流能力IC和ICM 高集电极电流IC在高增益（HFE） 由于产生的热量少，效率高 应用 通用开关和静音 LCD背光 供电线路开关电路 电池驱动的设备（手机，摄像机和手持设备） |