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Parameters:

  • Model:SI1016X-T1
  • Manufacturer:HUABAN
  • Date Code:05+nopb
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:A
  • Package:SOT-563

最大源漏极电压Vds
Drain-Source Voltage
20V/-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
6V/6V
最大漏极电流Id
Drain Current
485mA/-370mA
源漏极导通电阻Rds
Drain-Source On-State Resistance
31.25Ω@ VGS =1.8V, ID =350mA/2.7Ω@ VGS =-1.8V, ID =-150mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.45~1V/-0.45~-1V
耗散功率Pd
Power Dissipation
250mW/0.25W
Description & ApplicationsComplementary N- and P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • Trench FET Power MOSFETs • 2000 V ESD Protection • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 0.7 Ω P-Channel, 1.2 Ω • Low Threshold: ± 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers
描述与应用互补N和P沟道20-V(D-S)的MOSFET 特点  •无卤股权  •沟槽FET功率MOSFET  •2000 V ESD保护  •非常小的足迹  •高边开关  •低导通电阻:   N通道,0.7Ω   P沟道1.2Ω  •低阈值:±0.8 V(典型值)  •开关速度快:14纳秒  •1.8 V操作 福利  •易于驱动开关。  •低失调电压(错误)  •低电压工作  •高速电路  •低电池电压工作 应用  •更换数字晶体管,电平转换器  •电池供电系统  •电源转换器电路  •负载/功率开关手机,寻呼机

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SI1016X-T1
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