最大源漏极电压Vds
Drain-Source Voltage | 20V/-20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 6V/6V |
最大漏极电流Id
Drain Current | 485mA/-370mA |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 31.25Ω@ VGS =1.8V, ID =350mA/2.7Ω@ VGS =-1.8V, ID =-150mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.45~1V/-0.45~-1V |
耗散功率Pd
Power Dissipation | 250mW/0.25W |
| Description & Applications | Complementary N- and P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • Trench FET Power MOSFETs • 2000 V ESD Protection • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 0.7 Ω P-Channel, 1.2 Ω • Low Threshold: ± 0.8 V (Typ.) • Fast Switching Speed: 14 ns • 1.8 V Operation BENEFITS • Ease in Driving Switches • Low Offset (Error) Voltage • Low-Voltage Operation • High-Speed Circuits • Low Battery Voltage Operation APPLICATIONS • Replace Digital Transistor, Level-Shifter • Battery Operated Systems • Power Supply Converter Circuits • Load/Power Switching Cell Phones, Pagers |
| 描述与应用 | 互补N和P沟道20-V（D-S）的MOSFET 特点 •无卤股权 •沟槽FET功率MOSFET •2000 V ESD保护 •非常小的足迹 •高边开关 •低导通电阻： N通道，0.7Ω P沟道1.2Ω •低阈值：±0.8 V（典型值） •开关速度快：14纳秒 •1.8 V操作 福利 •易于驱动开关。 •低失调电压（错误） •低电压工作 •高速电路 •低电池电压工作 应用 •更换数字晶体管，电平转换器 •电池供电系统 •电源转换器电路 •负载/功率开关手机，寻呼机 |