Please log in first
Home
Cart0
Inventory:624000 Min Order:10
Parameters
Related model

×

Parameters:

  • Model:SI1025X
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:DVA
  • Package:SOT-563

最大源漏极电压Vds
Drain-Source Voltage
-60V
最大栅源极电压Vgs(±)
Gate-Source Voltage
-20V
最大漏极电流Id
Drain Current
-190mA/-0.19A
源漏极导通电阻Rds
Drain-Source On-State Resistance
8Ω@ VGS = -4.5V, ID = -25mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
-1~-3V
耗散功率Pd
Power Dissipation
250mW/0.25W
Description & ApplicationsP-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free Option Available • Trench FET Power MOSFETs • High-Side Switching • Low On-Resistance: 4 Ω • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.) • Low Input Capacitance: 23 pF (typ.) • Miniature Package • Gate-Source ESD Protected: 2000 V APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,Memories, Transistors etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid State Relays
描述与应用P沟道60-V(D-S)的MOSFET 特点  •无卤股权  •沟槽FET功率MOSFET  •高边开关  •低导通电阻:4Ω  •低阈值: - 2 V(典型值)  •开关速度快:20 ns(典型值)  •低输入电容23 PF(典型值)  •微型包装  •门源ESD保护:2000 V 应用  •驱动器:继电器,螺线管,灯,锤子,显示器,记忆,晶体管等。  •电池供电系统  •电源转换器电路  •固态继电器

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
SI1025X
*Title:
Message:
*Code: