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  • Model:SI4334DV
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:G34
  • Package:SOT-163

MOSFET TYPE  N-Channel   MOSFET
MOS Drain-Source Voltage (Vds)  30V

Vgs(±)

MOS Gate-Source Voltage

 ±12V
MOS Drain Current  (Id)  14.8A

Rds(on)

MOS Drain-Source On-State Resistance

 VGS = 4.5 V, ID = 8 A RDS=0.0132~0.016Ω

Vgs(th)

MOS Gate-Source Threshold Voltage

 0.6~1.7v
DIODES TYPE  Schottky Diode
DIODE Reverse Voltage  (Vr)  30V
DIODE Average Rectified Current (Io)  2A
DIODE Forward Voltage(Vf)  
Power Dissipation (Pd)  5.2W
Description & Applications  N-Channel 30-V (D-S) MOSFET with Schottky Diode
Technical Documentation Download Read Online

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SI4334DV
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