MOSFET TYPE |
N-Channel MOSFET |
MOS Drain-Source Voltage (Vds) |
30V |
Vgs(±)
MOS Gate-Source Voltage
|
±12V |
MOS Drain Current (Id) |
14.8A |
Rds(on)
MOS Drain-Source On-State Resistance
|
VGS = 4.5 V, ID = 8 A RDS=0.0132~0.016Ω |
Vgs(th)
MOS Gate-Source Threshold Voltage
|
0.6~1.7v |
DIODES TYPE |
Schottky Diode |
DIODE Reverse Voltage (Vr) |
30V |
DIODE Average Rectified Current (Io) |
2A |
DIODE Forward Voltage(Vf) |
|
Power Dissipation (Pd) |
5.2W |
Description & Applications |
N-Channel 30-V (D-S) MOSFET with Schottky Diode |
Technical Documentation Download |
Read Online |