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  • Model:ssm3k02f
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:ku
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage30V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current1A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.2Ω/Ohm @500mA,4V
开启电压Vgs(th) Gate-Source Threshold Voltage0.6-1.1V
耗散功率Pd Power Dissipation200mW/0.2W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications Small Package Low on Resistance : Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5V) Low Gate Threshold Voltage: Vth = 0.6~1.1 V (@VDS = 3 V, ID = 0.1 mA)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 高速开关应用 小包装 低导通电阻RON =120MΩ(最大)(@ VGS=4V) :RON =150MΩ(最大)(@ VGS=2.5 V) 低栅极阈值电压VTH =0.6〜1.1 V(@ VDS=3 V,ID= 0.1毫安)

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