最大源漏极电压Vds
Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V |
最大漏极电流Id
Drain Current | -4.5A |
源漏极导通电阻Rds
Drain-Source On-State
Resistance | 0.048Ω @-2.2A,-4.5V |
开启电压Vgs（th）
Gate-Source Threshold Voltage | -0.5--1.2V |
耗散功率Pd
Power Dissipation | 2.2W |
| Description & Applications | Notebook PC Applications Portable Equipment Applications Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) |
| 描述与应用 | 笔记本电脑应用 便携式设备的应用 低漏源导通电阻RDS（ON）= 48mΩ（典型值） 高正向转移导纳：| YFS|= 8.2 S（典型值） 低漏电流：IDSS= -10μA（最大）（VDS=-20 V） 增强模式：VTH =-0.5至-1.2 V（VDS= -10 V，ID= -200μA） |