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Parameters:

  • Model:UPA828TD
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:10000
  • Min Order:100
  • Mark/silk print/code/type:KL
  • Package:SOT-763

V(BR) CBO

Collector-Base Voltage

 5V

V(BR) CEO

Collector-Emitter Voltage

 3V
Collector Current(IC)  30MA
Transtion Frequency(fT)  11GHZ
DC Current Gain(hFE)  70~140

VCE (sat)

Collector-Emitter Saturation Voltage

 
Power Dissipation (Pd)  180MW/0.18W
Description & Applications  NPN SILICON RF TWIN TRANSISTOR 
• Built-in low phase distortion transistor suited for OSC applications
• Built-in 2 transistors (2 X NE687) 
Technical Documentation Download Read Online

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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UPA828TD
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