集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | -180V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | -140V |
集电极连续输出电流IC
Collector Current(IC) | -4A |
截止频率fT
Transtion Frequency(fT) | 120MHz |
直流电流增益hFE
DC Current Gain(hFE) | 100~300 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -360mV/-0.36V |
耗散功率Pc
PoWer Dissipation | 3W |
| Description & Applications | PNP MEDIUM POWER LOW SATURATION TRANSISTOR DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 140V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions. FEATURES • 4 amps continuous current • Up to 10 amps peak current • Very low saturation voltages APPLICATIONS • Motor driving • Line switching • High side switches • Subscriber line interface cards (SLIC) |
| 描述与应用 | PNP中等功率低饱和晶体管 说明 这个新的第五代低饱和140V PNP晶体管包装的SOT223轮廓中提供极低的导通态损耗使得它非常适合用在DC-DC电路和各种驱动和电源管理功能。 特点 •4安培连续电流 •高达10安培峰值电流 •极低的饱和电压 应用 •电机驱动 •线路切换 •高边开关 •用户线路接口卡（SLIC） |