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Parameters:

  • Model:BC856BM3T5G
  • Manufacturer:HUABAN
  • Date Code:07+ROHS 07NOPB
  • Standard Package:8000
  • Min Order:100
  • Mark/silk print/code/type:3B
  • Package:sot-723

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−80V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−65V
集电极连续输出电流IC
Collector Current(IC)
−100mA/-0.1A
截止频率fT
Transtion Frequency(fT)
100MHz
直流电流增益hFE
DC Current Gain(hFE)
220~475
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-300mV/-0.3V
耗散功率Pc
PoWer Dissipation
265mW/0.265W
Description & ApplicationsGeneral Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. • This is a Pb−Free Device
描述与应用通用晶体管 PNP硅 这种晶体管是专为通用放大器应用。它被安置在SOT-723是专为低功率表面贴装应用。 •这是一个Pb-Free设备

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BC856BM3T5G
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