集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO) | −80V |
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO) | −65V |
集电极连续输出电流IC
Collector Current(IC) | −100mA/-0.1A |
截止频率fT
Transtion Frequency(fT) | 100MHz |
直流电流增益hFE
DC Current Gain(hFE) | 220~475 |
管压降VCE（sat）
Collector-Emitter SaturationVoltage | -300mV/-0.3V |
耗散功率Pc
PoWer Dissipation | 265mW/0.265W |
| Description & Applications | General Purpose Transistor PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−723 which is designed for low power surface mount applications. • This is a Pb−Free Device |
| 描述与应用 | 通用晶体管 PNP硅 这种晶体管是专为通用放大器应用。它被安置在SOT-723是专为低功率表面贴装应用。 •这是一个Pb-Free设备 |