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Parameters:

  • Model:MMBF170-7
  • Manufacturer:HUABAN
  • Date Code:05+ 05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:K6Z
  • Package:SOT-23/SC-59

最大源漏极电压Vds Drain-Source Voltage60V
最大栅源极电压Vgs(±) Gate-Source Voltage20V
最大漏极电流Id Drain Current500mA/0.5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.05Ω/Ohm @200mA,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.8-3.0V
耗散功率Pd Power Dissipation300mW/0.3W
Description & ApplicationsPower MOSFET 500 mA, 60 V N−Channel SOT−23 Features High density cell design for low RDS(ON) .Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.
描述与应用功率MOSFET 500毫安,60 V N沟道SOT-23 高密度电池设计的低RDS(ON) 电压控制小信号开关 坚固,可靠。 高饱和电流能力

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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MMBF170-7
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