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Parameters:

  • Model:BFG540
  • Manufacturer:HUABAN
  • Date Code:05+
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:N8
  • Package:SOT-343

集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
15V
集电极连续输出电流IC
Collector Current(IC)
120mA/0.12A
截止频率fT
Transtion Frequency(fT)
9Ghz
直流电流增益hFE
DC Current Gain(hFE)
120~250
管压降VCE(sat)
Collector-Emitter Saturation Voltage
耗散功率Pc
Power Dissipation
400mW/0.4W
Description & Applications• NPN 9 GHz wideband transistors • High power gain • Low noise figure • High transition frequency • Gold metallization ensures • excellent reliability. NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages.
描述与应用•NPN9 GHz的宽带晶体管 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保 •出色的可靠性 NPN硅平面外延晶体管,用于宽带 在GHz范围内的应用,如 作为模拟和数字蜂窝 电话机,无绳电话 (CT1,CT2,DECT等),雷达 探测器,卫星电视调谐器(SATV), MATV/ CATV放大器和中继器 在光纤系统中的放大器。

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ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
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BFG540
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