Please log in first
Home
Cart0
Inventory:23900 Min Order：10
Parameters
Related model

×

Parameters：

  • Model：SSM6J206FE
  • Manufacturer：HUABAN
  • Date Code：11+ROHS 11+ROHS
  • Standard Package：4000
  • Min Order：10
  • Mark/silk print/code/type：KR
  • Package：SOT-563/ES6

最大源漏极电压Vds
Drain-Source Voltage		-20V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-2A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		320mΩ@ VGS = -1.8V, ID = -200mA
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.3~-1.0V
耗散功率Pd
Power Dissipation		500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications • 1.8V drive • P-ch 2-in-1 • Low ON-resistance:Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V)
描述与应用东芝场效应晶体管的硅P沟道MOS类型 高速开关应用 电源管理开关应用 •1.8V驱动 •P沟道2合1 •低导通电阻:Ron = 320 mΩ (max) (@VGS = -1.8 V) Ron = 186 mΩ (max) (@VGS = -2.5 V) Ron = 130 mΩ (max) (@VGS = -4.0 V)

×

Online inquiry：

* From：
To：
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product：
SSM6J206FE
*Title：
Message：
*Code：