Home
Cart0

×

Parameters:

  • Model:SSM6N36TU
  • Manufacturer:HUABAN
  • Date Code:12+ROHS
  • Standard Package:3000
  • Min Order:10
  • Mark/silk print/code/type:NX
  • Package:SOT-353/SC70-5/ESV

最大源漏极电压Vds
Drain-Source Voltage
20V
最大栅源极电压Vgs(±)
Gate-Source Voltage
10V
最大漏极电流Id
Drain Current
500mA/0.5A
源漏极导通电阻Rds
Drain-Source On-State Resistance
630mΩ@ VGS = 5V, ID = 200mA
开启电压Vgs(th)
Gate-Source Threshold Voltage
0.35~1.0V
耗散功率Pd
Power Dissipation
500mW/0.5W
Description & ApplicationsTOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type • High-Speed Switching Applications • 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V)
描述与应用东芝场效应晶体管的硅N沟道MOS类型 •高速开关应用 •1.5-V驱动器 •低导通电阻:罗恩= 1.52Ω(最大值)(@ VGS= 1.5 V) RON =1.14Ω(最大)(@ VGS=1.8 V) RON =0.85Ω(最大值)(@ VGS=2.5 V) RON= 0.66Ω(最大)(@ VGS=4.5 V) RON =0.63Ω(最大)(@ VGS=5.0 V)

×

Online inquiry:

* From:
To:
ERIC ELECTRONICS TECHNOLOGY (HK) LIMITED
Product:
SSM6N36TU
*Title:
Message:
*Code: