| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/-0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
47 kΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22 kΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
2.14 |
| Q2基极输入电阻R1 Input Resistance(R1) |
47 kΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22 kΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
2.14 |
| 直流电流增益hFE DC Current Gain(hFE) |
70 |
| 截止频率fT Transtion Frequency(fT) |
250MHZ |
| 耗散功率Pc Power Dissipation |
100mW/0.1W |
| Description & Applications |
TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) . * Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications * Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. * Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. |
| 描述与应用 |
东芝晶体管的硅NPN·PNP外延型的（PCT工艺）（内置偏置电阻晶体管）。 *开关，逆变电路，接口电路，驱动器电路应用 *两个偏置电阻晶体管纳入一个超迷你封装。 *偏置电阻晶体管，减少了部件数量。能制造更加紧凑的设备，并降低装配成本。 |