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15GN01S-TL-E NPN Transistors(BJT) 15V 50mA 1.5GHz 200~400 120mV/0.12V SOT-523/SMCP marking 2A high-frequency amplifier high-frequency switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
15V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
8V |
| 集电极连续输出电流IC Collector Current(IC) |
50mA |
| 截止频率fT Transtion Frequency(fT) |
1.5GHz |
| 直流电流增益hFE DC Current Gain(hFE) |
200~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
120mV/0.12V |
| 耗散功率Pc Power Dissipation |
100mW/0.1W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • Small ON-resistance. • Small output capacitance. • Ultrasmall package permitting applied sets to be small and slim. |
| 描述与应用 | NPN平面外延硅晶体管 VHF UHF频段高频开关，高频通用放大器应用 特点 •小导通电阻。 •小的输出电容。 •超小封装允许设置小而纤细。 |
