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2SK3376TT-B JFET N-Channel 20v 0.17~0.3mA SOT-523 marking 3B

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Product description
最大源漏极电压Vds
Drain-Source Voltage
20v
栅源极击穿电压V(BR)GS
Gate-Source Voltage
-20v
漏极电流(Vgs=0V)IDSS
Drain Current
0.17~0.3ma
关断电压Vgs(off)
Gate-Source Cut-off Voltage
-0.15~-1v
耗散功率Pd
Power Dissipation
100mW/0.1W
Description & Applications •Field Effect Transistor Silicon N Channel Junction Type
描述与应用 •场效应晶体管的硅N沟道结型
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