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2SC4666 NPN Transistors(BJT) 50V 150mA/0.15A 250MHz 600~3600 120mV/0.12V SOT-323/SC-70/USM marking PB radio general amplifier

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
50V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
50V
集电极连续输出电流IC
Collector Current(IC)
150mA/0.15A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
600~3600
管压降VCE(sat)
Collector-Emitter Saturation Voltage
120mV/0.12V
耗散功率Pc
Power Dissipation
100mW/0.1W
Description & Applications Features •TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) •Audio Frequency General Purpose Amplifier Applications •High Voltage: VCEO = 50 V •High collector Current: IC = 150 mA (max) •High hFE: hFE = 600 ~ 3600 •Small package
描述与应用 特点 •东芝晶体管的硅NPN外延式(PCT程序) •音频通用放大器应用 •高电压:VCEO= 50 V •高集电极电流IC=150 mA(最大) •高HFE:HFE=600〜3600 •小包装
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