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2N7002T MOSFET N-Channel 60V 300mA/0.3A SOT-23/SC-59 marking 27W fast switch
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30V |
| 最大漏极电流Id Drain Current | 300mA/0.3A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.8Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-2.5V |
| 耗散功率Pd Power Dissipation | 830mW/0.83W |
| Description & Applications | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N-channel TrenchMOS FET Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology |
| 描述与应用 | N沟道增强型场效应晶体管 特性 N-沟道FETTrenchMOS 兼容逻辑电平阈 开关速度非常快 表面贴装封装 TrenchMOS技术 |
