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2SA1036K PNP transistors(BJT) -40V -500mA/-0.5A 200MHz 180~390 -600mV/-0.6V SOT-23/SMT3 marking HP low voltage operating

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−40V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−32V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
200MHz
直流电流增益hFE
DC Current Gain(hFE)
82~180
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−600mV/-0.6V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & Applications SURFACE MOUNT Medium Power PNP Transistor Features 1) Large IC. ICMAX.= -500mA 2) Low VCE(sat).Ideal for low-voltage operation. 3) Complements the 2SC2411K.
描述与应用 表面贴装中等功率PNP晶体管 特点 1)大型IC。 ICMAX=500毫安 2)低VCE(SAT)。非常适于低电压操作。 3)补充2SC2411K
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