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2SA1052 PNP transistors（BJT） -30V -100mA/-0.1A 160~320 -200mV/-0.2V SOT-23/MPAK marking MD Low-Frequency General-Purpose Amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
−30V |
| 集电极连续输出电流IC Collector Current(IC) |
−100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) |
|
| 直流电流增益hFE DC Current Gain(hFE) |
250~500 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage |
−200mV/-0.2V |
| 耗散功率Pc PoWer Dissipation |
150mW/0.15W |
| Description & Applications | Silicon PNP Epitaxial Application Low frequency amplifier |
| 描述与应用 | 硅PNP外延型的 应用 低频放大器 |
