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2SA1338 PNP transistors(BJT) -60V -500mA/-0.5A 300MHz 200~400 -100mV/-0.1V SOT-23/CP marking AL6 high breakdown voltage/highspeed switch

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
-60V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
−50V
集电极连续输出电流IC
Collector Current(IC)
−500mA/-0.5A
截止频率fT
Transtion Frequency(fT)
300MHz
直流电流增益hFE
DC Current Gain(hFE)
200~400
管压降VCE(sat)
Collector-Emitter SaturationVoltage
-100mV/-0.1V
耗散功率Pc
PoWer Dissipation
200mW/0.2W
Description & ApplicationsHigh-Speed Switching Applications Features · Adoption of FBET process. · High breakdown voltage : VCEO=(–)50V. · Large current capacitiy and high fT. · Ultrasmall-sized package permitting sets to be smallsized, slim
描述与应用高速开关应用 特点  ·采用的FBET过程。  ·高击穿电压:VCEO=( - )50V。  ·大电流capacitiy和高FT。  ·超小尺寸封装,允许小尺寸,超薄套
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