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2SA1566JIETL PNP transistors(BJT) -120V -100mA/-0.1A 400 to 800 -150mV/-0.15V SOT-23/MPAK marking JIE Low-Frequency General-Purpose Amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -120V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -120V |
集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
截止频率fT Transtion Frequency(fT) | |
直流电流增益hFE DC Current Gain(hFE) | 400 to 800 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −150mV/-0.15V |
耗散功率Pc PoWer Dissipation | 150mW/0.15W |
Description & Applications | Silicon PNP Epitaxial Application Low frequency amplifier |
描述与应用 | 硅PNP外延型的 应用 低频放大器 |