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2SA1608 PNP transistors(BJT) -60V -500mA/-0.5A 400MHz 75~150 -450mV/-0.45V SOT-323/SC-70 marking Y12 RF amplifier/switch
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
截止频率fT Transtion Frequency(fT) | 400MHz |
直流电流增益hFE DC Current Gain(hFE) | 75~150 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −450mV/-0.45V |
耗散功率Pc PoWer Dissipation | 150mW/0.15W |
Description & Applications | High frequency amplifier and switching PNP silicon epitaxial transistor mini mold high fT; complementary to 2SC3739 |
描述与应用 | 高频放大器和开关 PNP硅外延晶体管 小型模具 高频率; 2SC3739互补 |