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2SA1618-GR PNP+PNP Complex Bipolar Transistor -50V -150mA HEF=200~400 SOT-153/SMV marking SG switch and digital circuit application
V(BR) CBO Collector-Base Voltage |
-50V |
V(BR) CEO Collector-Emitter Voltage |
-50V |
Collector Current(IC) | -150MA/-0.15A |
Transtion Frequency(fT) | 80MHZ |
DC Current Gain(hFE) | 200~400 |
VCE(sat) Collector-Emitter Saturation Voltage |
-0.3V |
Power Dissipation (Pd) | 300MW/0.3W |
Description & Applications | Features •Transistor silicon PNP epitaxial type(PCT process) •audio frequency general purpuse amplifier application •small package (dual type) •high voltage and high current •high hfe •excellent hfe linearity •complementary to 2SC4207 |
Technical Documentation Download | Read Online |