Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
2SA1890-R PNP transistors（BJT） -80V -1A 120MHz 170~340 -200mV/-0.2V SOT-89/SC-62 marking 0 Low-Frequency General-Purpose Amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −80V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 120MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 170~340 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −200mV/-0.2V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SC5026 Features Low collector to emitter saturation voltage VCE(sat) High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
| 描述与应用 | 硅PNP外延刨床类型 对于低频输出放大 互补2SC5026 特点 低集电极到发射极饱和电压VCE（SAT） 高集电极发射极电压VCEO。 迷你型包装，包装盒包装的设备和通过自动插入 |
