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2SA1973-6 PNP transistors（BJT） -30V -1A 150MHz 200~400 -150mV/-0.15V SOT-23/CP marking NS6 low-frequency general amplifier driver
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −150mV/-0.15V |
| 耗散功率Pc PoWer Dissipation | 250mW/0.25W |
| Description & Applications | Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features · Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer. · Adoption of FBET process. · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage(VCE(sat)≤0.3V). · High VEBO (VEBO≥15V). |
| 描述与应用 | 低频通用放大器驱动器，静音电路应用 特点 ·采用FBET，MBIT过程。 ·大电流容量。 ·低集电极 - 发射极饱和电压。 ·高速开关。 ·超小包装便于在终端产品的小型化 |
