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2SA204600L PNP transistors(BJT) -30V -1.5A 170MHz 160~560 -150mV/-0.15V SOT-23/SC-59 marking 3Z DC-DCconvertor
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −20V |
集电极连续输出电流IC Collector Current(IC) | -1.5A |
截止频率fT Transtion Frequency(fT) | 170MHz |
直流电流增益hFE DC Current Gain(hFE) | 160~560 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −150mV/-0.15V |
耗散功率Pc PoWer Dissipation | 400mW/0.4W |
Description & Applications | PNP Silicon epitaxial planar type For DC-DC converter Features • Low collector to emitter saturation voltage VCE(sat) • Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
描述与应用 | PNP硅外延平面型 用于DC-DC转换器 特点 •低集电极到发射极饱和电压VCE(SAT) •迷你型3-G1型包装,使小型化和薄型化的设备和自动插入磁带通过包装 |