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2SA812H PNP transistors（BJT） -60V -100mA/-0.1A 180MHz 200~400 -300mV/-0.3V SOT-23/SC-59 marking M6 high DC current gain
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流IC Collector Current(IC) | −100mA/-0.1A |
| 截止频率fT Transtion Frequency(fT) | 180MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -300mV/-0.3V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon epitaxial planar type Features Complementary to 2SC1623 High DC Current Gain High Voltage |
| 描述与应用 | PNP硅外延平面型 特点 互补型2SC1623 高DC电流增益 高电压 |
