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2SB1051K PNP transistors（BJT） -40V -1A 150MHz 180~390 -500mV/-0.5V SOT-23/SMT3 marking AQR low-frequency power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −32V |
| 集电极连续输出电流IC Collector Current(IC) | -1A |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率Pc PoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Low frequency. power amplifier Features Large collector saturation voltage |
| 描述与应用 | PNP硅外延平面晶体管 低频功率放大器。 特点 大集电极饱和电压 |
