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2SB1120G-TD PNP transistors(BJT) -20V -2.5A 250MHz 280~560 -450mV/-0.45V SOT-89/PCP marking BCG voltage regulator

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Product description
集电极-基极反向击穿电压V(BR)CBO
Collector-Base Voltage(VCBO)
−20V
集电极-发射极反向击穿电压V(BR)CEO
Collector-Emitter Voltage(VCEO)
-10V
集电极连续输出电流IC
Collector Current(IC)
-2.5A
截止频率fT
Transtion Frequency(fT)
250MHz
直流电流增益hFE
DC Current Gain(hFE)
280~560
管压降VCE(sat)
Collector-Emitter SaturationVoltage
−450mV/-0.45V
耗散功率Pc
PoWer Dissipation
500mW/0.5W
Description & ApplicationsPNP Silicon epitaxial planar transistor High current driver applications Applications Strobes,voltage regulators,relay drivers,lamp drivers. Features Low collector-to-emitter saturation voltage Large current capacity Very small size making it easy to provide highdensity, small-sized hybrid IC’s
描述与应用PNP硅外延平面晶体管 高电流驱动应用 应用 选通脉冲,电压调节器,继电器驱动器,灯驱动器。 特点 低集电极 - 发射极饱和电压 大电流容量 规模非常小,因此很容易提供高密度,小型混合IC
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