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2SB1204S PNP transistors(BJT) -60V -8A 130MHz 140~280 -500mV/-0.5V TO-252/DPAK marking B1204 highspeed inverter/convertor
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −50V |
集电极连续输出电流IC Collector Current(IC) | -8A |
截止频率fT Transtion Frequency(fT) | 130MHz |
直流电流增益hFE DC Current Gain(hFE) | 140~280 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率Pc PoWer Dissipation | 1W |
Description & Applications | PNP Silicon epitaxial planar transistor High current switching applications Applications Relay drivers ,high speed inverters,converters,and other general high current switching applications Feature Low collector-to-emitter saturation voltage High current and high fT Excellent linearity of hFE Fast switching speed |
描述与应用 | PNP硅外延平面晶体管 高电流开关应用 应用 继电器驱动器,高速逆变器,转换器,及其他一般高电流开关应用 特点 低集电极 - 发射极饱和电压 高电流和高FT 出色的线性度HFE 开关速度快 |