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2SB1316TR PNP transistors（BJT） -100V -2A 1000~10000 -1.5V SOT-89/MPT marking B1316
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -100V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −100V |
| 集电极连续输出电流IC Collector Current(IC) | -2A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 1000~10000 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1.5V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP Silicon epitaxial planar transistor Power transistor Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD1980 |
| 描述与应用 | PNP硅外延平面晶体管 功率晶体管 特点 1）达林顿连接高直流电流增益。 2）内置基极和发射极之间的电阻。 3）内置阻尼二极管。 4）补充2SD1980 |
