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2SB1407CSTR PNP transistors（BJT） -35V -2.5A 100~200 -1000mV/-1V TO-252/DPAK marking B1407 low-frequency power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -35V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −35V |
| 集电极连续输出电流IC Collector Current(IC) | -2.5A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 18W |
| Description & Applications | PNP Silicon epitaxial planar transistor Application Low frequency power amplifier complementary Pair with 2SD2121S |
| 描述与应用 | PNP硅外延平面晶体管 应用 低频功率放大器 互补配对2SD2121S |
