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2SB1667-Y PNP transistors（BJT） -60V -3A 9MHz 100~200 -1.7V TO-263/N-G1 marking B1667 radio power amplifier
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 9MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1.7V |
| 耗散功率Pc PoWer Dissipation | 1.5W |
| Description & Applications | Triple Diffused PNP Silicon transistor Audio frequency power amplifier applications Features Low collector saturation |
| 描述与应用 | 三重扩散PNP硅晶体管 音频功率放大器应用 特点 低集电极饱和 |
