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2SB1721(O)-Z-E1 PNP transistors（BJT） -60V -3A 5MHz 100~400 -1000mV/-1V TO-252/DPAK marking B1721 highspeed switch
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流IC Collector Current(IC) | -3A |
| 截止频率fT Transtion Frequency(fT) | 5MHz |
| 直流电流增益hFE DC Current Gain(hFE) | 100~400 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 1W |
| Description & Applications | Silicon Power Transistors High speed switching Features DC current gain is high. There is a Z type as a surface-mount products. |
| 描述与应用 | 硅功率晶体管 高速开关 特点 直流电流增益高。 有一个Z型作为表面贴装产品。 |
