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2SB968 PNP transistors(BJT) -50V -1.5A 150MHz 80~220 -1000mV/-1V TO-252/DPAK marking B968 low-frequency output amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | −50V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | −40V |
集电极连续输出电流IC Collector Current(IC) | -1.5A |
截止频率fT Transtion Frequency(fT) | 150MHz |
直流电流增益hFE DC Current Gain(hFE) | 80~220 |
管压降VCE(sat) Collector-Emitter SaturationVoltage | -1000mV/-1V |
耗散功率Pc PoWer Dissipation | 10W |
Description & Applications | Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 ■ Features • Possible to solder radiation fin directly to printed circuit board • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC |
描述与应用 | PNP硅外延平面型 低频输出放大 互补2SD1295 ■特点 •可直接焊散热片到印刷电路板 •高集电极 - 发射极电压(基本打开)VCEO •大集电极功耗PC |