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2SC2295-C NPN Transistors(BJT) 30V 30mA 300MHz 110~220 100mV/0.1V SOT-23/SC-59 marking VC high-frequency amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 30V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 20V |
集电极连续输出电流IC Collector Current(IC) | 30mA |
截止频率fT Transtion Frequency(fT) | 300MHz |
直流电流增益hFE DC Current Gain(hFE) | 110~220 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 100mV/0.1V |
耗散功率Pc Power Dissipation | 200mW/0.2W |
Description & Applications | NPN Silicon epitaxial planar type For high-frequency amplification Complementary to 2SA1022 Features High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. |
描述与应用 | NPN硅外延平面型 对于高频放大 互补2SA1022 特点 高转换频率FT。 迷你型包装,让瘦身带包装盒包装的设备和通过自动插入。 |