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2SC2532 NPN Transistors(BJT) 40V 300mA/0.3A 10000 1.3V SOT-23/SC-59 marking AN radio amplifier
集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 40V |
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 40V |
集电极连续输出电流IC Collector Current(IC) | 300mA/0.3A |
截止频率fT Transtion Frequency(fT) | |
直流电流增益hFE DC Current Gain(hFE) | 10000 |
管压降VCE(sat) Collector-Emitter Saturation Voltage | 1.3V |
耗散功率Pc Power Dissipation | 150mW/0.15W |
Description & Applications | NPN Silicon epitaxial Transistors Audio frequency amplifier applications Driver stage for led lamp applications Temperature compensation applications Features High hFE |
描述与应用 | NPN硅外延晶体管 音频放大器应用 驱动LED灯应用阶段 温度补偿的应用 特点 高HFE |